Recent progress of GaN power devices for automotive applications

被引：286

作者：

Kachi, Tetsu ^{[1
]}

机构：

[1] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 4801192, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 10期

关键词：

CURRENT COLLAPSE; BREAKDOWN VOLTAGE; THRESHOLD VOLTAGE; ALGAN/GAN HEMTS; DEPLETION MODE; SURFACE-STATES; COIMPLANTATION; ENHANCEMENT; CRYSTAL; GROWTH;

D O I：

10.7567/JJAP.53.100210

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Many power switching devices are used in hybrid vehicles (HVs) and electric vehicles (EVs). To improve the efficiency of HVs and EVs, better performance characteristics than those of Si power devices, for example, lower on-resistance, higher speed, higher operation temperature, are required for the power devices. GaN power devices are promising candidates for satisfying the requirements. A lateral GaN power device with a blocking voltage of 600 V and a vertical GaN power device with a blocking voltage of 1200 V are suitable for medium power applications for sub systems and high-power applications for the drive of main motors, respectively. Power device applications in HVs and EVs and the current status of the GaN power device are presented. The reliability of the GaN power device is also discussed. (C) 2014 The Japan Society of Applied Physics

引用

页数：10

共 50 条

[1] GaN power devices for automotive applications
Kachi, Tetsu
IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM - 2007 IEEE CSIC SYMPOSIUM, TECHNOLOGY DIGEST, 2007, : 15 - 18
[2] GaN Power Devices for Automotive Applications
Uesugi, T.
Kachi, T.
GALLIUM NITRIDE MATERIALS AND DEVICES VIII, 2013, 8625
[3] Recent Progress in SiC and GaN Power Devices
Sheng, Kuang
Yang, Shu
Guo, Qing
Xu, Hongyi
GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7, 2017, 80 (07): : 37 - 51
[4] Recent Progress in GaN Devices for Power and Integrated Circuit
Otsuka, Nobuyuki
Kawai, Yasufumi
Nagai, Shuichi
2017 IEEE 12TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 2017, : 928 - 931
[5] Recent progress of SiC power devices and applications
Li, Lijuan
Li, Canbing
Cao, Yijia
Wang, Feng
IEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING, 2013, 8 (05) : 515 - 521
[6] Recent progress in GaN devices
Borsuk, GM
SEMICONDUCTOR DEVICES, 1996, 2733 : 154 - 161
[7] RECENT PROGRESS IN NDT FOR AUTOMOTIVE APPLICATIONS
PAPADAKIS, EP
MATERIALS EVALUATION, 1982, 40 (10) : 30 - 30
[8] GaN Power Device for Automotive Applications
Kachi, Tetsu
2014 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), 2014, : 923 - 925
[9] Recent progress of AlGaN/GaN heterojunction FETs for microwave power applications
Miyamoto, H
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1505 - 1510
[10] Recent progress and current issues in SiC semiconductor devices for power applications
Johnson, CM
Wright, NG
Uren, MJ
Hilton, KP
Rahimo, M
Hinchley, DA
Knights, AP
Morrison, DJ
Horsfall, AB
Ortolland, S
O'Neill, AG
IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 2001, 148 (02): : 101 - 108

← 1 2 3 4 5 →