Type-II InGaAs/GaAsSb superlattice for photodetection in the near infrared

被引：5

作者：

Brown, GJ ^{[1
]}

Van Nostrand, JE ^{[1
]}

Hegde, SM ^{[1
]}

Siskaninetz, W ^{[1
]}

Xie, QH ^{[1
]}

机构：

[1] USAF, Res Lab, Mat & Mfg Directorate, MLPS, Wright Patterson AFB, OH 45433 USA

来源：

PHOTODETECTOR MATERIALS AND DEVICES VII | 2002年 / 4650卷

关键词：

superlattice; photodetector; InGaAs/GaAsSb; near infrared;

D O I：

10.1117/12.467662

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The optical properties of an In0.52Ga0.48As / GaAS(0.51)Sb(0.49) type-II superlattice lattice matched to InP(001) was characterized by photoluminescence and near infrared photoresponse. The samples were designed for optical emission near 1.8 rhom and were grown by molecular beam epitaxy. At 4K, a strong type-II luminescence at 1.8 mum (689meV) with a full width at half maximum (FWHM) of 18 meV was observed. Similarly, the onset of the band edge photoresponse occurred at 1.8 mum. (693 meV) at 10K. We believe this to be the first observation of both luminescence and photoresponse from the InGaAs/GaAsSb/InP materials system grown by any technique.

引用

页码：179 / 184

页数：6

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