The origin of aging in Al-SiO2-Si tunnel diodes

被引：6
|
作者：
Chattopadhyay, P [1 ]
Das, K [1 ]
机构：
[1] INDIAN ASSOC CULTIVAT SCI,DEPT PHYS CHEM,CALCUTTA 700032,W BENGAL,INDIA
来源：
JOURNAL OF APPLIED PHYSICS | 1996年 / 80卷 / 07期
关键词：
D O I：
10.1063/1.363303
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The origin of aging of Al-SiO2-Si tunnel diodes is investigated. A theoretical model is proposed based on the assumption that aluminum undergoes a chemical reaction with the SiO2 layer and produces silicon which introduces active centers for trapping electrons in the oxide layer. The model shows that the negative charge density that develops at the interface is responsible for the time dependence of the barrier height observed in Al-SiO2-Si tunnel devices. (C) 1996 American Institute of Physics.
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页码：4229 / 4231
页数：3
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