Low field transport calculation of 2-dimensional electron gas in β-(AlxGa1-x)2O3/Ga2O3 heterostructures (vol 128, 105703, 2020)

被引:0
|
作者
Kumar, Avinash [1 ]
Ghosh, Krishnendu [1 ]
Singisetti, Uttam [1 ]
机构
[1] Univ Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA
关键词
D O I
10.1063/5.0048135
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页数:1
相关论文
共 50 条
  • [31] Metalorganic chemical vapor deposition of β-(AlxGa1-x)2O3 thin films on (001) β-Ga2O3 substrates
    Uddin Bhuiyan, A. F. M. Anhar
    Meng, Lingyu
    Huang, Hsien-Lien
    Sarker, Jith
    Chae, Chris
    Mazumder, Baishakhi
    Hwang, Jinwoo
    Zhao, Hongping
    APL MATERIALS, 2023, 11 (04)
  • [32] Control of Crystal Structure of Ga2O3 on Sapphire Substrate by Introduction of -(AlxGa1-x)2O3 Buffer Layer
    Jinno, Riena
    Uchida, Takayuki
    Kaneko, Kentaro
    Fujita, Shizuo
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2018, 255 (04):
  • [33] γ-phase inclusions as common structural defects in alloyed β-(AlxGa1-x)2O3 and doped β-Ga2O3 films
    Chang, Celesta S.
    Tanen, Nicholas
    Protasenko, Vladimir
    Asel, Thaddeus J.
    Mou, Shin
    Xing, Huili Grace
    Jena, Debdeep
    Muller, David A.
    APL MATERIALS, 2021, 9 (05)
  • [34] Carrier confinement observed at modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterojunction interface
    Oshima, Takayoshi
    Kato, Yuji
    Kawano, Naoto
    Kuramata, Akito
    Yamakoshi, Shigenobu
    Fujita, Shizuo
    Oishi, Toshiyuki
    Kasu, Makoto
    APPLIED PHYSICS EXPRESS, 2017, 10 (03)
  • [35] The Heteroepitaxy of Thick β-Ga2O3 Film on Sapphire Substrate with a β-(AlxGa1-x)2O3 Intermediate Buffer Layer
    Zhang, Wenhui
    Zhang, Hezhi
    Zhang, Song
    Wang, Zishi
    Liu, Litao
    Zhang, Qi
    Hu, Xibing
    Liang, Hongwei
    MATERIALS, 2023, 16 (07)
  • [36] THERMAL TRANSPORT ACROSS AL-(ALxGA1-x)2O3 AND AL-GA2O3 INTERFACES
    Shi, Jingjing
    Krishnan, Anusha
    Bhuiyan, A. F. M. Anhar Uddin
    Koh, Yee Rui
    Huynh, Kenny
    Mauze, Akhil
    Mu, Sai
    Foley, Brian M.
    Ahmad, Habib
    Itoh, Takeki
    Zhang, Yuewei
    Yuan, Chao
    Kim, Samuel
    Doolittle, W. Alan
    Van de Walle, Chris
    Speck, James S.
    Goorsky, Mark
    Hopkins, Patrick
    Zhao, Hongping
    Graham, Samuel
    PROCEEDINGS OF ASME 2021 INTERNATIONAL TECHNICAL CONFERENCE AND EXHIBITION ON PACKAGING AND INTEGRATION OF ELECTRONIC AND PHOTONIC MICROSYSTEMS (INTERPACK2021), 2021,
  • [37] Oxygen-radical-assisted pulsed-laser deposition of β-Ga2O3 and β-(AlxGa1-x)2O3 films
    Wakabayashi, Ryo
    Oshima, Takayoshi
    Hattori, Mai
    Sasaki, Kohei
    Masui, Takekazu
    Kuramata, Akito
    Yamakoshi, Shigenobu
    Yoshimatsu, Kohei
    Ohtomo, Akira
    JOURNAL OF CRYSTAL GROWTH, 2015, 424 : 77 - 79
  • [38] Enhancement Mode β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FET (HFET) With High Transconductance and Cutoff Frequency
    Vaidya, Abhishek
    Saha, Chinmoy Nath
    Singisetti, Uttam
    IEEE ELECTRON DEVICE LETTERS, 2021, 42 (10) : 1444 - 1447
  • [39] Electro-thermal co-design of β-(AlxGa1-x)2O3/Ga2O3 modulation doped field effect transistors
    Chatterjee, Bikramjit
    Song, Yiwen
    Lundh, James Spencer
    Zhang, Yuewei
    Xia, Zhanbo
    Islam, Zahabul
    Leach, Jacob
    McGray, Craig
    Ranga, Praneeth
    Krishnamoorthy, Sriram
    Haque, Aman
    Rajan, Siddharth
    Choi, Sukwon
    APPLIED PHYSICS LETTERS, 2020, 117 (15)
  • [40] Evaluation of Low-Temperature Saturation Velocity in β-(AlXGa1-X)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors
    Zhang, Yuewei
    Xia, Zhanbo
    McGlone, Joe
    Sun, Wenyuan
    Joishi, Chandan
    Arehart, Aaron R.
    Ringel, Steven A.
    Rajan, Siddharth
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (03) : 1574 - 1578