Low field transport calculation of 2-dimensional electron gas in β-(AlxGa1-x)2O3/Ga2O3 heterostructures (vol 128, 105703, 2020)

被引：0
|
作者：
Kumar, Avinash [1 ]
Ghosh, Krishnendu [1 ]
Singisetti, Uttam [1 ]
机构：
[1] Univ Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2021年 / 129卷 / 10期
关键词：
D O I：
10.1063/5.0048135
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页数：1
相关论文
共 50 条
  • [1] Epitaxial β-Ga2O3 and β-(AlxGa1-x)2O3/β-Ga2O3 Heterostructures Growth for Power Electronics
    Miller, Ross
    Alema, Fikadu
    Osinsky, Andrei
    IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2018, 31 (04) : 467 - 474
  • [2] Polarization engineering of two-dimensional electron gas at ε-(AlxGa1-x)2O3/ε-Ga2O3 heterostructure
    Wang, Yan
    Cao, Jiahe
    Song, Hanzhao
    Zhang, Chuang
    Xie, Zhigao
    Wong, Yew Hoong
    Tan, Chee Keong
    APPLIED PHYSICS LETTERS, 2023, 123 (14)
  • [3] Full-band Monte Carlo simulation of two-dimensional electron gas in (AlxGa1-x)2O3/Ga2O3 heterostructures
    Kumar, Avinash
    Singisetti, Uttam
    JOURNAL OF APPLIED PHYSICS, 2022, 132 (20)
  • [4] Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures
    Zhang, Yuewei
    Neal, Adam
    Xia, Zhanbo
    Joishi, Chandan
    Johnson, Jared M.
    Zheng, Yuanhua
    Bajaj, Sanyam
    Brenner, Mark
    Dorsey, Donald
    Chabak, Kelson
    Jessen, Gregg
    Hwang, Jinwoo
    Mou, Shin
    Heremans, Joseph P.
    Rajan, Siddharth
    APPLIED PHYSICS LETTERS, 2018, 112 (17)
  • [5] Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors
    Zhang, Yuewei
    Joishi, Chandan
    Xia, Zhanbo
    Brenner, Mark
    Lodha, Saurabh
    Rajan, Siddharth
    APPLIED PHYSICS LETTERS, 2018, 112 (23)
  • [6] Low field transport calculation of 2-dimensional electron gas in β - ( A l x G a 1 - x ) 2 O 3 / G a 2 O 3 heterostructures
    Kumar, Avinash
    Ghosh, Krishnendu
    Singisetti, Uttam
    JOURNAL OF APPLIED PHYSICS, 2020, 128 (10)
  • [7] Growth characteristics of corundum-structured α-(AlxGa1-x)2O3/Ga2O3 heterostructures on sapphire substrates
    Kaneko, Kentaro
    Suzuki, Kenta
    Ito, Yoshito
    Fujita, Shizuo
    JOURNAL OF CRYSTAL GROWTH, 2016, 436 : 150 - 154
  • [8] Erratum: Low field transport calculation of 2-dimensional electron gas in β - x G a 1 - X) 2 O 3 / G a 2 O 3 heterostructures (J. Appl. Phys. (2020) 128 (105703) DOI: 10.1063/5.0008578)
    Kumar, Avinash
    Ghosh, Krishnendu
    Singisetti, Uttam
    Journal of Applied Physics, 2021, 129 (10)
  • [9] Evaluation of band alignment of α-Ga2o3/α-(AlxGa1-x)2O3 heterostructures by X-ray photoelectron spectroscopy
    Uchida, Takayuki
    Jinno, Riena
    Takemoto, Shu
    Kaneko, Kentaro
    Fujita, Shizuo
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (04)
  • [10] Highly conductive epitaxial β-Ga2O3 and β-(AlxGa1-x)2O3 films by MOCVD
    Alema, Fikadu
    Itoh, Takeki
    Vog, Samuel
    Speck, James S.
    Osinsky, Andrei
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2022, 61 (10)
12345