Research on the reliability of Cu/Sn copper pillar bump

被引:0
|
作者
Zhao, Wen [1 ]
Rao, Li [2 ]
Hu, Anmin [2 ]
Gao, Liming [2 ]
Li, Ming [2 ]
机构
[1] China Acad Engn Phys, Inst Elect Engn, Mianyang 621000, Peoples R China
[2] Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, Minist Educ,State Key Lab Met Matrix Composites, Key Lab Thin Film & Microfabricat Technol, Shanghai 200240, Peoples R China
关键词
Copper pillar bump; intermetallic compounds; morphology; interfacial adhesion; reliability; SN INTERMETALLIC COMPOUND; INTERFACE; GROWTH; JOINTS;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
As the electronic packaging density continues to increase, flip chip or stacked packaging via bump bonding is gradually replacing traditional wire bonding and will become the mainstream packaging form in the future. For copper bumps, this new type of electronic interconnection has not yet been fixed by industry standards. Therefore, this paper has made a preliminary study on the reliability of this new type of package. We find that the growth rate of IMCs was faster at the initial stage of aging and decreased with the aging time increasing. In the early stage of IMCs growth, the form of the IMCs was mainly Cu6Sn5. As the thickness of Cu6Sn5 layer increased, the brittle phase Cu3Sn appeared. The growth of IMCs increased the interfacial adhesion. But after aging for 750h, the interfacial adhesion had a certain degree of decline.
引用
收藏
页码:946 / 949
页数:4
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