Lifetime Investigations of 4H-SiC PiN Power Diodes

被引：13
|
作者：
Reshanov, S. A. [1 ]
Bartsch, W. [2 ]
Zippelius, B. [1 ]
Pensl, G. [1 ]
机构：
[1] Univ Erlangen Nurnberg, Lehrstuhl Angew Phys, D-91058 Erlangen, Germany
[2] SiCED Elect Dev GmbH & Co KG, D-91058 Erlangen, Germany
来源：
SILICON CARBIDE AND RELATED MATERIALS 2008 | 2009年 / 615-617卷
关键词：
lifetime; DLTS; CRT; OCVD; CARRIER LIFETIME; TRANSIENT;
D O I：
10.4028/www.scientific.net/MSF.615-617.699
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Lifetime measurements are performed on 4H-SiC pin power diodes (6.5 kV). The lifetime values in the base range from 1.1 mu s to 2.1 mu s; these Values demonstrate the high quality of the 4H-SiC epilayer and the optimized device processing. The observed lifetimes are correlated with deep defect centers detected by deep level transient spectroscopy. The role of the Z(1/2)-center as a lifetime killer is discussed.
引用
收藏
页码：699 / 702
页数：4
相关论文
共 50 条
  • [21] Partial dislocations and stacking faults in 4H-SiC PiN diodes
    Twigg, ME
    Stahlbush, RE
    Fatemi, M
    Arthur, SD
    Fedison, JB
    Tucker, JB
    Wang, S
    JOURNAL OF ELECTRONIC MATERIALS, 2004, 33 (05) : 472 - 476
  • [22] Physical Modelling of Large Area 4H-SiC PiN Diodes
    Bryant, A. T.
    Jennings, M. R.
    Parker-Allotey, N-A.
    Mawby, P. A.
    Perez-Tomas, A.
    Brosselard, P.
    Godignon, P.
    Jorda, X.
    Milian, J.
    Palmer, P. R.
    Santi, E.
    Hudgins, J. L.
    2009 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION, VOLS 1-6, 2009, : 494 - +
  • [23] Current transport mechanisms in 4H-SiC pin diodes.
    Camara, N
    Bano, E
    Zekentes, K
    SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 1017 - 1020
  • [24] Structural defects in electrically degraded 4H-SiC PiN diodes
    Persson, POÅ
    Jacobson, H
    Molina-Aldareguia, JM
    Bergman, JP
    Tuomi, T
    Clegg, WJ
    Janzén, E
    Hultman, L
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 423 - 426
  • [25] 3.3 kV-10A 4H-SiC PiN diodes
    Brosselard, Pierre
    Camara, Nicolas
    Hassan, Jawad
    Jorda, Xavier
    Bergman, Peder
    Montserrat, Josep
    Millan, Jose
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 991 - +
  • [26] Partial dislocations and stacking faults in 4H-SiC PiN diodes
    Twigg, ME
    Stahlbush, RE
    Fatemi, M
    Arthur, SD
    Fedison, JB
    Tucker, JB
    Wang, S
    SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 : 537 - 540
  • [27] Photoemission of 4H-SiC pin diodes epitaxied by the sublimation method
    Camara, N.
    Zekentes, K.
    Bano, E.
    Thuaire, A.
    Lebedev, A.
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 391 - 394
  • [28] Effect of Ultraviolet Irradiation on 4H-SiC PiN Diodes Characteristics
    Xu, Xingliang
    Zhang, Lin
    Dong, Peng
    Li, Zhiqiang
    Li, Lianghui
    Li, Juntao
    Zhang, Jian
    NANOSCALE RESEARCH LETTERS, 2021, 16 (01):
  • [29] Neutron radiation induced effects in 4H-SiC PiN diodes
    Gsponer, Andreas
    Gaggl, Philipp
    Burin, Juergen
    Thalmeier, Richard
    Waid, Simon
    Bergauer, Thomas
    JOURNAL OF INSTRUMENTATION, 2023, 18 (11)
  • [30] Overlapping Shockley/Frank faults in 4H-SiC PiN diodes
    Twigg, M. E.
    Stahlbush, R. E.
    Losee, P. A.
    Li, C.
    Bhat, I. B.
    Chow, T. P.
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 383 - 386
12345