1/f noise in carbon nanotubes

被引：209
|
作者：
Collins, PG [1 ]
Fuhrer, MS
Zettl, A
机构：
[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 07期
关键词：
D O I：
10.1063/1.125621
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electrical noise characteristics of single-walled carbon nanotubes have been investigated. For all three cases of individual isolated nanotubes, thin films of interconnected nanotubes, and bulk nanotube mats, anomalously large bias-dependent 1/f noise is found. The noise magnitude greatly exceeds that commonly observed in metal films, carbon resistors, or even carbon fibers with comparable resistances. A single empirical expression describes the noise for all nanotube samples, suggesting a common noise-generating mechanism proportional only to the number of nanotubes in the conductor. We consider likely sources of the fluctuations, and consequences for electronic applications of nanotubes if the excessive noise cannot be suppressed. (C) 2000 American Institute of Physics. [S0003-6951(00)02701-7].
引用
收藏
页码：894 / 896
页数：3
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