Si-based D-band Frequency Conversion Circuits

被引：0

作者：

Kim, Dong-Hyun ^{[1
]}

Yun, Jongwon ^{[1
]}

Rieh, Jae-Sung ^{[1
]}

机构：

[1] Korea Univ, Sch Elect Engn, Seoul, South Korea

来源：

2012 INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC) | 2012年

基金：

新加坡国家研究基金会;

关键词：

CMOS; SiGe; mixers; frequency dividers; GHZ; MIXER;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A review on the Si-based D-band frequency circuits recently developed in Korea University is presented. Low power mixers operating near 140 GHz have been implemented based on SiGe BiCMOS and Si CMOS technologies. A couple of injection-locked frequency dividers with SiGe BiCMOS technology working around 140 GHz, which are intended for wide locking range, have also been fabricated.

引用

页码：251 / 253

页数：3

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