Si-based D-band Frequency Conversion Circuits

被引：0
|
作者：
Kim, Dong-Hyun [1 ]
Yun, Jongwon [1 ]
Rieh, Jae-Sung [1 ]
机构：
[1] Korea Univ, Sch Elect Engn, Seoul, South Korea
来源：
2012 INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC) | 2012年
基金：
新加坡国家研究基金会;
关键词：
CMOS; SiGe; mixers; frequency dividers; GHZ; MIXER;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A review on the Si-based D-band frequency circuits recently developed in Korea University is presented. Low power mixers operating near 140 GHz have been implemented based on SiGe BiCMOS and Si CMOS technologies. A couple of injection-locked frequency dividers with SiGe BiCMOS technology working around 140 GHz, which are intended for wide locking range, have also been fabricated.
引用
收藏
页码：251 / 253
页数：3
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