Light enhancement of Al nanoclusters embedded in Al-doped ZnO films of GaN-based light-emitting diodes

被引：6
|
作者：
Lee, Ching-Ting [2 ,3 ]
Chou, Ying-Hung [2 ,3 ]
Yan, Jheng-Tai [2 ,3 ]
Lee, Hsin-Ying [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Electroopt Engn, Tainan 701, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Adv Optoelect Technol Ctr, Tainan 701, Taiwan
[3] Natl Cheng Kung Univ, Ctr Micronano Sci & Technol, Tainan 701, Taiwan
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2009年 / 27卷 / 04期
关键词：
aluminium; gallium compounds; II-VI semiconductors; light emitting diodes; metal clusters; nanostructured materials; semiconductor thin films; sputter deposition; transmission electron microscopy; wide band gap semiconductors; zinc compounds; N-TYPE GAN; OHMIC CONTACTS; LAYER; OUTPUT; IMPROVEMENT; POWER;
D O I：
10.1116/1.3167370
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The aluminum (Al)-doped ZnO (AZO) films embedded with Al nanoclusters were employed to enhance the light output power of III-nitride-based light-emitting diodes (LEDs). The ZnO and Al targets were sputtered using a magnetron cosputtering system. Al nanoclusters embedded in AZO films were found in the AZO films deposited with Al dc power of 10 W and ZnO rf power of 100 W using high resolution transmission electron microscopy. An increase of 20% in the light output power of the GaN-based LEDs with AZO films embedded with Al nanoclusters can be obtained compared to the conventional LEDs operated at 500 mA.
引用
收藏
页码：1901 / 1903
页数：3
相关论文
共 50 条
  • [41] Current spreading in GaN-based light-emitting diodes
    李强
    李虞锋
    张敏妍
    丁文
    云峰
    Chinese Physics B, 2016, 25 (11) : 428 - 433
  • [42] Current spreading in GaN-based light-emitting diodes
    Li, Qiang
    Li, Yufeng
    Zhang, Minyan
    Ding, Wen
    Yun, Feng
    CHINESE PHYSICS B, 2016, 25 (11)
  • [43] GaN-based light-emitting diodes with SiONx on sidewalls
    Zhu, Yanxu
    Xu, Chen
    Da, Xiaoli
    Niu, Nanhui
    Han, Jun
    Shen, Guangdi
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (06) : 659 - 662
  • [44] Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Hollow Silica Nanospheres
    Shin, Dong Su
    Kim, Taek Gon
    Kim, Dongjun
    Kim, Kyoung-Kook
    Park, Jinsub
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2017, 17 (06) : 4073 - 4077
  • [45] Power enhancement of GaN-based light-emitting diodes with double roughened surfaces
    Yang, Lianqiao
    Hu, Jianzheng
    Zhang, Jianhua
    ENERGY EDUCATION SCIENCE AND TECHNOLOGY PART A-ENERGY SCIENCE AND RESEARCH, 2012, 30 (01): : 159 - 164
  • [46] Analysis of light extraction efficiency of GaN-based light-emitting diodes
    Wang, Pei
    Cao, Bin
    Gan, Zhiyin
    Liu, Sheng
    3RD INTERNATIONAL PHOTONICS AND OPTOELECTRONICS MEETINGS (POEM 2010), 2011, 276
  • [47] Effect of multiquantum barriers in performance enhancement of GaN-based light-emitting diodes
    Xia, Chang Sheng
    Li, Z. M. Simon
    Li, Z. Q.
    Sheng, Y.
    APPLIED PHYSICS LETTERS, 2013, 102 (01)
  • [48] Ga-Doped ZnO Transparent Conductive Oxide Films Applied to GaN-Based Light-Emitting Diodes for improving Light Extraction Efficiency
    Sheu, Jinn-Kong
    Lee, Ming-Lud
    Lu, Y. S.
    Shu, K. W.
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2008, 44 (11-12) : 1211 - 1218
  • [49] Sapphire Substrate Processing for High-Performance GaN-Based Light-Emitting Diodes -Micropatterning of Sapphire Substrates and Its Effect on Light Enhancement in GaN-Based Light-Emitting Diodes-
    Aota, Natsuko
    Aida, Hideo
    Kimura, Yutaka
    Kawamata, Yuki
    SENSORS AND MATERIALS, 2014, 26 (06) : 393 - 402
  • [50] Theoretical study of polarization-doped GaN-based light-emitting diodes
    Zhang, L.
    Ding, K.
    Liu, N. X.
    Wei, T. B.
    Ji, X. L.
    Ma, P.
    Yan, J. C.
    Wang, J. X.
    Zeng, Y. P.
    Li, J. M.
    APPLIED PHYSICS LETTERS, 2011, 98 (10)
12345