Annealing and doping effects on structure and optical properties of sol-gel derived ZrO2 thin films

被引:79
|
作者
Liu, WC [1 ]
Wu, D
Li, AD
Ling, HQ
Tang, YF
Ming, NB
机构
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Dept Mat Sci & Engn, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Natl Lab Solid State Microstruct, Ctr Adv Studies Sci & Technol Microstruct, Nanjing 210093, Peoples R China
关键词
sol-gel; ZrO2; RTA; CFA; rare earth elements doping;
D O I
10.1016/S0169-4332(02)00177-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
ZrO2 and rare earth elements doped ZrO2 thin films were prepared by sol-gel method using zirconium n-propoxide as the precursor, with rapid thermal annealing (RTA) and conventional furnace annealing (CFA). Crystalline structure of ZrO2 films was analyzed by X-ray diffraction. The high-temperature tetragonal phase was observed at room temperature. The effects of rare earth elements doping and different heat treatment processing on the structure and optical properties were observed and discussed. The temperature of transformation from tetragonal to monoclinic of rapid thermal annealed films (similar to750 degreesC) is higher than that of conventional furnace annealed films (similar to450 degreesC), while in rare earth elements doped films. no monoclinic is observed even at 850 degreesC. Refractive index of ZrO2 films was measured by prism coupling. The refractive indices were found to vary as functions of annealing temperature, annealing technique and doping elements. RTA and rare earth elements doping were found to increase the refractive index of ZrO2 films. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:181 / 187
页数:7
相关论文
共 50 条
  • [41] The effects of the precursor solutions on the structure and the properties of sol-gel derived BST thin films
    Ryoo, JS
    Kang, SJ
    Yoon, YS
    FERROELECTRIC THIN FILMS V, 1996, 433 : 69 - 74
  • [42] Processing effects on structure and properties of sol-gel derived PLZT ferroelectric thin films
    Yan, Peiyu
    Li, Longtu
    Zhang, Xiaowen
    Cailiao Yanjiu Xuebao/Chinese Journal of Materials Research, 1995, 9 (06): : 535 - 538
  • [43] Effect of annealing temperature on microstructural evolution and electrical properties of sol-gel processed ZrO2/Si films
    Hwang, Soo Min
    Lee, Seung Muk
    Park, Kyung
    Lee, Myung Soo
    Joo, Jinho
    Lim, Jun Hyung
    Kim, Hyoungsub
    Yoon, Jae Jin
    Kim, Young Dong
    APPLIED PHYSICS LETTERS, 2011, 98 (02)
  • [44] Morphological features and optical properties of nanosized ZrO2 films prepared by sol-gel spin coating
    Dimitrov, O.
    Stambolova, I
    Vassilev, S.
    Lazarova, K.
    Babeva, T.
    21ST INTERNATIONAL SUMMER SCHOOL ON VACUUM, ELECTRON AND ION TECHNOLOGIES, 2020, 1492
  • [45] Fabrication of sol-gel derived ZrO2 thin film for HR coatings via rapid thermal annealing process
    Wang, Shengzhao
    Shen, Jun
    JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2013, 67 (02) : 339 - 343
  • [46] XPS studies on ZrO2 thin films deposited on glass substrate by sol-gel
    Yu, Xingang
    Gong, Yi
    Bi, Wenyue
    Tian, Xuechun
    Ma, Hongwen
    Zhao, Huifeng
    Qiu, Guohong
    Wang, Li
    HIGH-PERFORMANCE CERAMICS V, PTS 1 AND 2, 2008, 368-372 : 1277 - +
  • [47] Densification and aging of ZrO2 films prepared by sol-gel
    Brenier, R
    Gagnaire, A
    THIN SOLID FILMS, 2001, 392 (01) : 142 - 148
  • [48] Morphology, structure and optical properties of sol-gel ITO thin films
    Stoica, TF
    Teodorescu, VS
    Blanchin, MG
    Stoica, TA
    Gartner, M
    Losurdo, M
    Zaharescu, M
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 101 (1-3): : 222 - 226
  • [49] The effects of solvent on the properties of sol-gel derived PZT thin films
    Jung, JY
    Kim, WS
    Park, HH
    Kim, TS
    FERROELECTRICS, 2001, 263 (1-4) : 1627 - 1634
  • [50] Thin ZrO2 sol–gel films for catalytic applications
    E. Krumov
    J. Dikova
    K. Starbova
    D. Popov
    V. Blaskov
    K. Kolev
    L. D. Laude
    Journal of Materials Science: Materials in Electronics, 2003, 14 : 759 - 760