Structural and Electrical Properties of Sol-gel Spin Coated Indium Doped Cadmium Oxide Thin Films

被引：0
|
作者：
Rajammal, R. [1 ]
Savarimuthu, E. [2 ]
Arumugam, S. [2 ]
机构：
[1] MVM Govt Arts Coll Women, Dept Phys, Dindigul 624001, India
[2] Gandhigrm Rural Inst, Dept Phys, Gandhigram 624302, India
来源：
SOLID STATE PHYSICS: PROCEEDINGS OF THE 58TH DAE SOLID STATE PHYSICS SYMPOSIUM 2013, PTS A & B | 2014年 / 1591卷
关键词：
Sol gel Spin Coating; Structural and Electrical Properties; Indium doped CdO thin films;
D O I：
10.1063/1.4872839
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The indium doped CdO thin films have been prepared by the sol-gel spin coating technique and the influence of indium doping concentration on the structural and electrical properties of the deposited films has been investigated. The indium doping concentration in the solution has been varied from 0-10 wt% insteps of 2wt%. A indium doping concentration of 6wt% has been found to be optimum for preparing the films and at this stage a minimum resistivity of 5.92x10(-4)Omega cm and a maximum carrier concentration of 1.20x10(20)cm(-3) have been realized.
引用
收藏
页码：1021 / 1023
页数：3
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