Influence of sintering temperature on the strength and micro-structure were investigated on silicon nitride specimens fabricated by pressureless post-sintering process using low-purity silicon powder as raw materials. Densification of reaction-bonded silicon nitride with sintering aid did not proceed further upon setting the post-sintering temperature at 1600 or 1650degreesC due to the volatilization of species and poor sinterbility. Sintering at 1850degreesC provided almost fully densified silicon nitride having an average strength of 521 MPa, the grains of this materials were relatively fine but did not develop into a rod-like shape.
机构:
Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
Wang Weide
Chen Huanbei
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Nanjing Elect Devices Inst, Nanjing 210016, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
Chen Huanbei
Li Shishuai
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Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
Univ Chinese Acad Sci, Beijing 100049, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
Li Shishuai
Yao Dongxu
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Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
Yao Dongxu
Zuo Kaihui
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Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
Zuo Kaihui
Zeng Yuping
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Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
机构:
Pusan Natl Univ, Coll Nanosci & Nanotechnol, Dept Nanofus Technol, Pusan 627706, South KoreaPusan Natl Univ, Coll Nanosci & Nanotechnol, Dept Nanofus Technol, Pusan 627706, South Korea
Song, Byung Ju
Song, Woo Jin
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Chungnam Natl Univ, Dept Nanomat Engn, Taejon 305764, South KoreaPusan Natl Univ, Coll Nanosci & Nanotechnol, Dept Nanofus Technol, Pusan 627706, South Korea
Song, Woo Jin
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Han, Jun Hyun
Kim, Ka Ram
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Pusan Natl Univ, Coll Nanosci & Nanotechnol, Dept Nanofus Technol, Pusan 627706, South KoreaPusan Natl Univ, Coll Nanosci & Nanotechnol, Dept Nanofus Technol, Pusan 627706, South Korea
Kim, Ka Ram
Yoon, Su Jong
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Pusan Natl Univ, Coll Nanosci & Nanotechnol, Dept Nanofus Technol, Pusan 627706, South KoreaPusan Natl Univ, Coll Nanosci & Nanotechnol, Dept Nanofus Technol, Pusan 627706, South Korea
Yoon, Su Jong
Kim, Tae Gyu
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Pusan Natl Univ, Coll Nanosci & Nanotechnol, Dept Nanofus Technol, Pusan 627706, South KoreaPusan Natl Univ, Coll Nanosci & Nanotechnol, Dept Nanofus Technol, Pusan 627706, South Korea
Kim, Tae Gyu
Kim, Jin Kon
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Pusan Natl Univ, Coll Nanosci & Nanotechnol, Dept Nanofus Technol, Pusan 627706, South KoreaPusan Natl Univ, Coll Nanosci & Nanotechnol, Dept Nanofus Technol, Pusan 627706, South Korea
Kim, Jin Kon
Cho, Hyun
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Pusan Natl Univ, Coll Nanosci & Nanotechnol, Dept Nanofus Technol, Pusan 627706, South KoreaPusan Natl Univ, Coll Nanosci & Nanotechnol, Dept Nanofus Technol, Pusan 627706, South Korea
Cho, Hyun
Kim, Gyeung-Ho
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Korea Inst Sci & Technol, Nanoanal Ctr, Seoul 130650, South KoreaPusan Natl Univ, Coll Nanosci & Nanotechnol, Dept Nanofus Technol, Pusan 627706, South Korea