High Mobility and Luminescent Efficiency in Organic Single-Crystal Light-Emitting Transistors

被引：239

作者：

Bisri, Satria Zulkarnaen ^{[1
]}

Takenobu, Taishi ^{[1
,2
]}

Yomogida, Yohei ^{[1
]}

Shimotani, Hidekazu ^{[1
]}

Yamao, Takeshi ^{[3
]}

Hotta, Shu ^{[3
]}

Iwasa, Yoshihiro ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3300012, Japan

[3] Kyoto Inst Technol, Dept Macromol Sci & Engn, Sakyo Ku, Kyoto 6068585, Japan

来源：

ADVANCED FUNCTIONAL MATERIALS | 2009年 / 19卷 / 11期

关键词：

FIELD-EFFECT TRANSISTORS; OPTICAL GAIN; AMBIPOLAR; EMISSION;

D O I：

10.1002/adfm.200900028

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A high-performance ambipolar light-emitting transistor (LET) that has high hole and electron mobilities and excellent luminescence charcteristics is described. By using this device, a conspicuous light-confined edge emission and current-density-dependent spectral evolution are observed. These findings will result in broader utilization of device potential and they provide a promising route for realizing electrically driven organic lasers.

引用

页码：1728 / 1735

页数：8

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