Reliability of silicon nitride dielectric-based metal-insulator-metal capacitors

被引：3

作者：

Remmel, T ^{[1
]}

Ramprasad, R ^{[1
]}

Roberts, D ^{[1
]}

Raymond, M ^{[1
]}

Martin, M ^{[1
]}

Qualls, D ^{[1
]}

Luckowski, E ^{[1
]}

Braithwaite, S ^{[1
]}

Miller, M ^{[1
]}

Walls, J ^{[1
]}

机构：

[1] Motorola Inc, Technol Solut Grp, Chandler, AZ 85224 USA

来源：

2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS | 2004年

关键词：

MIM capacitor; reliability; TDDB; silicon nitride; wafer-scale; voltage acceleration model;

D O I：

10.1109/RELPHY.2004.1315395

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

TDDB testing of MIM capacitors with various thickness plasma silicon nitride dielectric yielded high quality lifetime data, with very large Weibull betas and consistency between wafer-scale and package level tests. An excellent fit of the data to the 1/E-model was obtained indicating that the E-model lifetime extrapolation generally adopted would result in very conservative estimates of PEN MIM lifetimes.

引用

页码：573 / 574

页数：2

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