Dual-polarity high voltage generator design for non-volatile memories

被引：0

作者：

Wang, CC ^{[1
]}

Tseng, YL ^{[1
]}

Chen, TH ^{[1
]}

Hu, R ^{[1
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung 80424, Taiwan

来源：

ICECS 2003: PROCEEDINGS OF THE 2003 10TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS 1-3 | 2003年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A novel voltage generator using 4 clocks with two different phases is presented in this work to provide a high voltage supply required by non-volatile memories during programming mode and erase mode operations. Both the positive and negative polarities of the voltage are generated to serve as the programming voltage and the erase voltage, respectively. The proposed design is carried out by gated pass transistors and switched capacitors. The regulated generated voltages which the proposed design can provide is +11.7 V and -11.6 V given VDD = 2.5 V when the circuit is implemented by TSMC 0.25 mum 1P5M CMOS technology. The maximum power dissipation is estimated to be 3.8 mW given 12.5 MHz clocks.

引用

页码：248 / 251

页数：4

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