Direct observation of the magnetic ordering process in the ferromagnetic semiconductor Ga1-xMnxAs via soft x-ray magnetic circular dichroism

被引:9
|
作者
Takeda, Yukiharu [1 ]
Ohya, Shinobu [2 ,3 ]
Pham, Nam Hai [2 ,4 ]
Kobayashi, Masaki [2 ]
Saitoh, Yuji [1 ]
Yamagami, Hiroshi [1 ,5 ]
Tanaka, Masaaki [2 ,3 ]
Fujimori, Atsushi [1 ,6 ]
机构
[1] Japan Atom Energy Agcy, Mat Sci Res Ctr, 1-1-1 Kouto, Sayo, Hyogo 6795148, Japan
[2] Univ Tokyo, Ctr Spintron Res Network, Grad Sch Engn, Bunkyo Ku, Tokyo 1138656, Japan
[3] Univ Tokyo, Dept Elect Engn & Informat Syst, Bunkyo Ku, Tokyo 1138656, Japan
[4] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528550, Japan
[5] Kyoto Sangyo Univ, Dept Phys, Kita Ku, Kyoto 6038555, Japan
[6] Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan
基金
日本学术振兴会; 日本科学技术振兴机构;
关键词
TRANSITION; LEVEL; GAAS; BAND;
D O I
10.1063/5.0031605
中图分类号
O59 [应用物理学];
学科分类号
摘要
In order to understand the mechanism of the ferromagnetism in the ferromagnetic semiconductor Ga 1 - xMn xAs [(Ga,Mn)As], we have investigated the magnetic behavior on a microscopic level through systematic temperature ( T)- and magnetic field ( H)-dependent soft x-ray magnetic circular dichroism (XMCD) experiments at the Mn L 2 , 3 absorption edges. The T and H dependences of XMCD intensities have been analyzed using a model consisting of the ferromagnetic (FM), paramagnetic, and superparamagnetic (SPM) components. Intriguingly, we have found a common behavior for the ferromagnetic ordering process in (Ga,Mn)As samples with different Mn concentrations (4% and 10.8%) and different Curie temperature ( T C) values (65, 120, and 164K). In particular, the SPM component develops well above T C, indicating that local FM regions are formed well above T C. The present findings indicate that the onset of ferromagnetic ordering is triggered by local electronic states around the substitutional Mn ions rather than uniform electronic states considered by mean-field theories. Insight into the most representative ferromagnetic semiconductor, (Ga,Mn)As, provided by the present study will be an important step in understanding the mechanism of ferromagnetic ordering in various ferromagnetic semiconductor families.
引用
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页数:11
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