Mathematical Models of the Common-Source and Common-Gate Amplifiers Using a Metal-Ferroelectric- Semiconductor Field Effect Transistor

被引：0

作者：

Hunt, Mitchell R. ^{[1
]}

Sayyah, Rana ^{[1
]}

Mitchell, Cody ^{[1
]}

McCartney, Crystal L. ^{[1
]}

Macleod, Todd C. ^{[2
]}

Ho, Fat D. ^{[1
]}

机构：

[1] Univ Alabama, Dept Elect & Comp Engn, Huntsville, AL 35899 USA

[2] NASA, Marshall Space Flight Ctr, Huntsville, AL 35812 USA

来源：

INTEGRATED FERROELECTRICS | 2014年 / 157卷 / 01期

关键词：

MFSFET; MFFET; metal-ferroelectric-semiconductor field effect transistor; FeFET; FFET; ferroelectric transistor; common-source amplifier; common-gate amplifier; DRAIN AMPLIFIER;

D O I：

10.1080/10584587.2014.912086

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Mathematical models of the common-source and common-gate amplifiers using metal-ferroelectric-semiconductor field effect transistors (MFSFETs) are developed in this paper. The models are compared against data collected with MFSFETs of varying channel lengths and widths, and circuit parameters such as biasing conditions are varied as well. Considerations are made for the capacitance formed by the ferroelectric layer present between the gate and substrate of the transistors. Comparisons between the modeled and measured data are presented in depth.

引用

页码：81 / 88

页数：8

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