Total-Ionizing-Dose Effects on Threshold Voltage Distribution of 64-Layer 3D NAND Memories

被引：6

作者：

Kumar, Mondol Anik ^{[1
]}

Raquibuzzaman, Md ^{[1
]}

Buddhanoy, Matchima ^{[1
]}

Wasiolek, Maryla ^{[2
]}

Hattar, Khalid ^{[2
]}

Boykin, Timothy ^{[1
]}

Ray, Biswajit ^{[1
]}

机构：

[1] Univ Alabama, Dept Elect & Comp Engn, Huntsville, AL 35899 USA

[2] Sandia Natl Labs, Livermore, CA 94550 USA

来源：

2022 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW) (IN CONJUNCTION WITH 2022 NSREC) | 2022年

基金：

美国国家科学基金会;

关键词：

3-D NAND; ionizing radiation; tri-level-cell (TLC); total ionizing dose (TID); FLASH;

D O I：

10.1109/REDW56037.2022.9921459

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We measure total-ionizing-dose (TID) induced threshold voltage (V-t) loss of a commercial 64-layer triple-level-cell (TLC) 3D NAND memory using user-mode commands. Our experiments show that Vt distributions closely follow Gaussian distributions. At increasing TID, the distributions shift toward lower average values and the distribution widths widen. We calculate exact cell V-t shifts from the pre-irradiation conditions at different TID values. We find that V-t loss (Delta V-t) distributions also follow Gaussian distributions. We also find that Delta V-t values strongly depend on the cell programmed states.

引用

页码：221 / 225

页数：5

共 50 条

[21] Total-Ionizing-Dose Effects on Threshold Switching in 1T-TaS2 Charge Density Wave Devices
Liu, G.
Zhang, E. X.
Liang, C. D.
Bloodgood, M. A.
Salguero, T. T.
Fleetwood, D. M.
Balandin, A. A.
IEEE ELECTRON DEVICE LETTERS, 2017, 38 (12) : 1724 - 1727
[22] Ferroelectric Polarization Aided Low Voltage Operation of 3D NAND Flash Memories
Ham, Ilsik
Jeong, Youngseok
Baik, Seung Jae
Kang, Myounggon
ELECTRONICS, 2021, 10 (01) : 1 - 6
[23] Characterizing the Reliability and Threshold Voltage Shifting of 3D Charge Trap NAND Flash
Liu, Weihua
Wu, Fei
Zhang, Meng
Wang, Yifei
Lu, Zhonghai
Lu, Xiangfeng
Xie, Changsheng
2019 DESIGN, AUTOMATION & TEST IN EUROPE CONFERENCE & EXHIBITION (DATE), 2019, : 312 - 315
[24] A high-efficiency threshold voltage distribution test method based on the reliability of 3D NAND flash memory
Wei, Debao
Chen, Xiaoyu
Feng, Hua
Qiao, Liyan
Peng, Xiyuan
MICROELECTRONICS RELIABILITY, 2020, 114
[25] Characterization Summary of Performance, Reliability, and Threshold Voltage Distribution of 3D Charge-Trap NAND Flash Memory
Liu, Weihua
Wu, Fei
Chen, Xiang
Zhang, Meng
Wang, Yu
Lu, Xiangfeng
Xie, Changsheng
ACM TRANSACTIONS ON STORAGE, 2022, 18 (02)
[26] Single-Event Effects Response of 96-and 176-Layer 3D NAND Flash Memories
Wilcox, Edward P.
Joplin, Matthew B.
Berg, Melanie D.
2023 IEEE RADIATION EFFECTS DATA WORKSHOP, REDW IN CONJUNCTION WITH 2023 NSREC, 2023, : 136 - 141
[27] Transient program operation model considering distribution of electrons in 3D NAND flash memories
Lee D.C.
Shin H.
IEICE Electronics Express, 2021, 17 (23):
[28] VaLLR: Threshold Voltage Distribution Aware LLR Optimization to Improve LDPC Decoding Performance for 3D TLC NAND Flash
Cui, Lanlan
Wu, Fei
Liu, Xiaojian
Zhang, Meng
Xie, Changsheng
2019 IEEE 37TH INTERNATIONAL CONFERENCE ON COMPUTER DESIGN (ICCD 2019), 2019, : 668 - 671
[29] Transient program operation model considering distribution of electrons in 3D NAND flash memories
Lee, Dong Chan
Shin, Hyungcheol
IEICE ELECTRONICS EXPRESS, 2020, 17 (23):
[30] Improved ISPP scheme for narrow threshold voltage distribution in 3-D NAND flash memory
Yang, Giho
Park, Chanyang
Nam, Kihoon
Kim, Donghyun
Park, Min Sang
Baek, Rock-Hyun
SOLID-STATE ELECTRONICS, 2023, 202

← 1 2 3 4 5 →