Ferroelectric HfZrOx Ge and GeSn PMOSFETs with Sub-60 mV/decade Subthreshold Swing, Negligible Hysteresis, and Improved IDS

被引：175
|
作者：
Zhou, Jiuren [1 ]
Han, Genquan [1 ]
Li, Qinglong [1 ]
Peng, Yue [1 ]
Lu, Xiaoli [1 ]
Zhang, Chunfu [1 ]
Zhang, Jincheng [1 ]
Sun, Qing-Qing [2 ]
Zhang, David Wei [2 ]
Hao, Yue [1 ]
机构：
[1] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond, Xian 710071, Shaanxi, Peoples R China
[2] Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
来源：
2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2016年
关键词：
NEGATIVE CAPACITANCE;
D O I：
10.1109/IEDM.2016.7838401
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the first ferroelectric (FE) HfZrOx (HZO) Ge and GeSn pMOSFETs with sub-60 mV/decade subthreshold swing (SS) (40 similar to 43 mV/decade), negligible hysteresis, and enhanced I-DS. With a RTA at 450 degrees C, FE devices with reduced hysteresis of 40 similar to 60 mV demonstrate the significantly improved SS and I-DS characteristics compared to control devices without FE, owing to the negative capacitance (NC) effect induced by HZO. FE Ge and GeSn pFETs achieve 22% and 20% I-DS enhancement than control devices, respectively, at the drive voltage of 1.0 V. NC effect in FE devices is proved by the gate leakage and inversion capacitance characteristics.
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页数：4
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