Impact of Humidity on Dielectric Charging in RF MEMS Capacitive Switches

被引:42
|
作者
Peng, Zhen [1 ]
Palego, Cristiano [1 ]
Hwang, James C. M. [1 ]
Forehand, David I. [2 ]
Goldsmith, Charles L. [2 ]
Moody, Cody [3 ]
Malczewski, Andrew [3 ]
Pillans, Brandon W. [3 ]
Daigler, Richard [4 ]
Papapolymerou, John [4 ]
机构
[1] Lehigh Univ, Bethlehem, PA 18015 USA
[2] MEMtronics Corp, Plano, TX 75075 USA
[3] Raytheon Co, Dallas, TX 75243 USA
[4] Georgia Inst Technol, Atlanta, GA 30308 USA
关键词
Charge injection; dielectric films; dielectric materials; humidity; microelectromechanical devices; microwave devices; switches;
D O I
10.1109/LMWC.2009.2017595
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel technique is used to distinguish the charging of the surface from that of the bulk of the dielectrics of different types of RF MEMS capacitive switches under different electric fields and humidity levels. In general, bulk charging dominates in dry air, while surface charging increases linearly with increasing humidity. Under comparable electric fields and humidity levels, switches made of silicon dioxide are less susceptible to surface charging than switches made of silicon nitride. These quantitative results not only underscore the importance of packaging the switches in a dry ambient atmosphere, but also validate the novel technique for evaluating the effectiveness of dielectric preparation and packaging.
引用
收藏
页码:299 / 301
页数:3
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