Low-Damage and High-Rate Sputtering of Silicon Surfaces by Ethanol Cluster Ion Beam

被引：8
|
作者：
Ryuto, Hiromichi [1 ]
Sugiyama, Kazumichi [1 ]
Ozaki, Ryosuke [1 ]
Takaoka, Gikan H. [1 ]
机构：
[1] Kyoto Univ, Photon & Elect Sci & Engn Ctr, Kyoto 6158510, Japan
来源：
APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 01期
关键词：
EXPANSION; SIZE; GAS;
D O I：
10.1143/APEX.2.016504
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
To realize the high-rate and low-damage sputtering of a Si surface, the effect of irradiating an ethanol cluster ion beam on a Si surface was investigated. The sputtering depths in Si substrates induced by the ethanol cluster ion beam irradiation were larger than those in SiO(2) substrates, which was due to a chemical sputtering effect. The lattice disorder and the surface roughness of the Si substrates decreased with increasing retarding voltage. (C) 2009 The Japan Society of Applied Physics
引用
收藏
页码：0165041 / 0165043
页数：3
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