Electronic structure of In2O3 from resonant x-ray emission spectroscopy

被引：41

作者：

Piper, L. F. J. ^{[1
]}

DeMasi, A. ^{[1
]}

Cho, S. W. ^{[1
]}

Smith, K. E. ^{[1
]}

Fuchs, F. ^{[2
,3
]}

Bechstedt, F. ^{[2
,3
]}

Koerber, C. ^{[4
]}

Klein, A. ^{[4
]}

Payne, D. J. ^{[5
]}

Egdell, R. G. ^{[5
]}

机构：

[1] Boston Univ, Dept Phys, Boston, MA 02215 USA

[2] Univ Jena, Inst Festkorpertheorie & Opt, D-07743 Jena, Germany

[3] Univ Jena, ETSF, D-07743 Jena, Germany

[4] Tech Univ Darmstadt, Inst Mat Sci, D-64287 Darmstadt, Germany

[5] Univ Oxford, Chem Res Lab, Oxford OX1 3TA, England

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 02期

基金：

英国工程与自然科学研究理事会;

关键词：

conduction bands; density functional theory; electronic density of states; indium compounds; semiconductor materials; valence bands; X-ray absorption spectra; X-ray emission spectra; X-ray photoelectron spectra; SCATTERING;

D O I：

10.1063/1.3070524

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The valence and conduction band structures of In2O3 have been measured using a combination of valence band x-ray photoemission spectroscopy, O K-edge resonant x-ray emission spectroscopy, and O K-edge x-ray absorption spectroscopy. Excellent agreement is noted between the experimental spectra and O 2p partial density of states calculated within hybrid density functional theory. Our data are consistent with a direct band gap for In2O3.

引用

页数：3

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