Effect of Se beam flux rate on photovoltaic properties of CIGS cells fabricated by three-stage co-evaporation process

被引：7

作者：

Yun, Jae Ho ^{[1
]}

Kim, Ki Hwan ^{[2
]}

Ahn, Byung Tae ^{[2
]}

Yoon, Kyung Hoon ^{[1
]}

机构：

[1] Korea Inst Energy & Res, Photovolta Res Grp, Taejon 305343, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 8 | 2006年 / 3卷 / 08期

关键词：

D O I：

10.1002/pssc.200669611

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The conversion efficiency of CIGS cells fabricated with three stage co-evaporation process was improved by regulating the Se beam flux rate. When the Se beam flux rate was 15 angstrom/s or less, the surface of CIGS was uniform and it showed tightly connected structure and facet shape structure. However pits and crevices were found on the surface in the condition of Se beam flux rate above 15 angstrom/s, which caused an increase in the leakage current. The best CIGS solar cell was obtained at the Se beam flux rate of 15 angstrom/s and it had the following photovoltaic parameters: conversion efficiency of 17.57 %, J(sc) = 36.48 m angstrom/cm(2), V-oc = 0.655 V and FF = 73.5 % in an active area of 0.45 cm(2). (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2547 / +

页数：2

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