A silicon nanowire with a Coulomb blockade effect at room temperature

被引：0
|
作者：
Hu, SF
Wong, WZ
Liu, SS
Wu, YC
Sung, CL
Huang, TY
Yang, TJ
机构：
[1] Natl Nano Device Labs, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan
[3] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan
来源：
ADVANCED MATERIALS | 2002年 / 14卷 / 10期
关键词：
D O I：
10.1002/1521-4095(20020517)14:10<736::AID-ADMA736>3.0.CO;2-9
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
An extremely narrow and thin silicon wire has been fabricated on a silicon-on-insulator wafer (see Figure). The room-temperature Coulomb blockade effects as well as the influence of a capacitively coupled gate on the transport properties of this conducting silicon quantum wire are studied. The results obtained are encouraging for the application of such wires in single-electron transistors.
引用
收藏
页码：736 / +
页数：5
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