Spacer-thickness dependence of interlayer exchange coupling in GaMnAs/InGaAs/GaMnAs trilayers grown on ZnCdSe buffers

被引：5
|
作者：
Tivakornsasithorn, Kritsanu [1 ,2 ]
Yoo, Taehee [1 ,3 ]
Lee, Hakjoon [1 ]
Choi, Seonghoon [1 ]
Lee, Sanghoon [1 ]
Liu, Xinyu [3 ]
Dobrowolska, M. [3 ]
Furdyna, Jacek K. [3 ]
机构：
[1] Korea Univ, Dept Phys, Seoul 136701, South Korea
[2] Mahidol Univ, Dept Phys, Fac Sci, Bangkok 10400, Thailand
[3] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA
来源：
SOLID STATE COMMUNICATIONS | 2017年 / 253卷
基金：
美国国家科学基金会; 新加坡国家研究基金会;
关键词：
FERROMAGNETIC SEMICONDUCTOR GAMNAS; MAGNETORESISTANCE; SUPERLATTICES; LAYERS;
D O I：
10.1016/j.ssc.2017.01.029
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Interlayer exchange coupling (IEC) between GaMnAs layers in GaMnAs/InGaAs/GaMnAs tri-layers was studied by magnetization measurements. Minor hysteresis loops are observed to shift in a direction indicating the presence of ferromagnetic (FM) IEC in the structures. The strength of the FM IEC clearly exhibits an exponential decrease with respect to nonmagnetic InGaAs spacer thickness. The fitting of the spacer thickness dependence of the FM IEC to an exponential decay function provides a decay length of 3.3 +/- 0.3 nm, which is relatively large compared to metallic multilayers, indicating a long ranged IEC in systems based on GaMnAs.
引用
收藏
页码：37 / 41
页数：5
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