Momentum relaxation of electrons in n-type bulk GaN

被引：18

作者：

Zanato, D

Gokden, S

Balkan, N ^{[1
]}

Ridley, BK

Schaff, WJ

机构：

[1] Univ Essex, Dept Elect Syst Engn, Colchester CO4 3SQ, Essex, England

[2] Balikesir Univ, Dept Phys, Balikesir, Turkey

[3] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2003年 / 34卷 / 1-2期

关键词：

D O I：

10.1016/j.spmi.2004.02.022

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report on Hall mobility and carrier density measurements on n-type GaN epilayers grown on sapphire by MBE. The results are discussed using a theoretical model that takes into account the most important scattering mechanisms contributing to determining the mobility of electrons in 3D. We show that polar-optical phonon scattering and dislocation scattering dominate at high temperatures especially in samples with low carrier density, while impurity and dislocation scattering take over at low temperatures. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：77 / 85

页数：9

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