Design and demonstration of high breakdown voltage GaN high electron mobility transistor (HEMT) using field plate structure for power electronics applications

被引:40
|
作者
Saito, W
Takada, Y
Kuraguchi, M
Tsuda, K
Omura, I
Ogura, T
机构
[1] Toshiba Co Ltd, Semicond Co, Saiwai Ku, Kawasaki, Kanagawa 2128583, Japan
[2] Toshiba Co Ltd, R&D Ctr, Saiwai Ku, Kawasaki, Kanagawa 2128583, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 4B期
关键词
GaN; HEMT; power semiconductor device; high voltage device; field plate;
D O I
10.1143/JJAP.43.2239
中图分类号
O59 [应用物理学];
学科分类号
摘要
AlGaN/GaN power high electron mobility transistors (HEMTs) with a breakdown voltage of 600 V are fabricated and demonstrated as switching power devices for motor drive and power supply applications. A high breakdown voltage was realized in the fabricated power-HEMT by the field plate technique and an ultra low on-state resistance of 3.3 mOmega(.)cm(2), which is 20 times lower than the silicon limit, due to the high critical field of the GaN material and the high mobility in a two-dimensional electron gas channel. A device with the double-field plate structure was also designed using two-dimensional device simulation to increase the breakdown voltage without any increase of the GaN layer thickness.
引用
收藏
页码:2239 / 2242
页数:4
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