Synthesis and electrical conductivity of multilayer silicene

被引：121

作者：

Vogt, P. ^{[1
]}

Capiod, P. ^{[2
]}

Berthe, M. ^{[2
]}

Resta, A. ^{[3
]}

De Padova, P. ^{[4
]}

Bruhn, T. ^{[1
]}

Le Lay, G. ^{[3
,4
]}

Grandidier, B. ^{[2
]}

机构：

[1] Tech Univ Berlin, D-10623 Berlin, Germany

[2] CNRS, UMR 8520, Dept ISEN, IEMN, F-59046 Lille, France

[3] Aix Marseille Univ, CNRS, CINaM, F-13288 Marseille 09, France

[4] ISM, Consiglio Nazl Ric, Inst Struttura Mat, I-00133 Rome, Italy

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 02期

关键词：

SCANNING-TUNNELING-MICROSCOPY; TRANSISTORS;

D O I：

10.1063/1.4861857

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The epitaxial growth and the electrical resistance of multilayer silicene on the Ag(111) surface has been investigated. We show that the atomic structure of the first silicene layer differs from the next layers and that the adsorption of Si induces the formation of extended silicene terraces surrounded by step bunching. Thanks to the controlled contact formation between the tips of a multiple probe scanning tunneling microscope and these extended terraces, a low sheet resistance, albeit much higher than the electrical resistance of the underlying silver substrate, has been measured, advocating for the electrical viability of multilayer silicene. (C) 2014 AIP Publishing LLC.

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页数：5

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