Micro-RBS characterisation of the chemical composition and particulate deposition on pulsed laser deposited Si1-xGex thin films

被引：11
|
作者：
Simon, A
Kántor, Z
机构：
[1] Hungarian Acad Sci, Inst Nucl Res, ATOMKI, H-4001 Debrecen, Hungary
[2] Hungarian Acad Sci, Res Grp Laser Phys, H-6701 Szeged, Hungary
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2002年 / 190卷
关键词：
RBS; microbeam; pulsed laser deposition; surface topography; particulate formation;
D O I：
10.1016/S0168-583X(02)00462-7
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The formation and deposition of particulates by pulsed laser deposition of Si1-xGex semiconductor alloy thin films are discussed. Using Rutherford backscattering spectrometry with micrometer lateral resolution (micro-RBS) the film composition was measured with high accuracy, even in the presence of particulates with a high areal density of 20,000-30,000 particulates per mm(2). We show that on impact of a particulate, the part of the thin film which is already deposited probably melts and its Ge content segregates to the surface. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：351 / 356
页数：6
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