Nanoporous, low-dielectric constant organosilicate materials derived from inorganic polymer blends

Porous materials will be needed to reach the ultralow-k dielectric on-chip insulator objectives for advanced semiconductor chips. Nanoporous organosilicates can be prepared using thermally labile macromolecular porogens and silsesquioxane resins. This process readily achieves dielectric constants of 1.5. There is a significant difference in porous morphologies depending on whether the porogens function by nucleation and growth or an actual templating mechanism.