Recent Progress on Probe-Based Storage Devices

被引:6
|
作者
Liu, Zhi-Gao [1 ]
Wang, Lei [1 ]
机构
[1] Nanchang Hangkong Univ, Sch Informat Engn, Nanchang 330063, Jiangxi, Peoples R China
关键词
Phase-change materials; probe; capping; transmission; FERROELECTRIC DATA-STORAGE; MARK SIZE; THIN-FILMS; MEMORY; DENSITY; MICROSCOPY; DEPENDENCE; VOLTAGE; OPTIMIZATION; DESIGN;
D O I
10.1109/ACCESS.2019.2922644
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Prosperity of information technology triggers a tremendous amount of digital data that needs to be stored by storage memories with ultra-high capacity. Although probe-based memory has exhibited its superb storage merits, its developments to date, however, remain slow due to several physical limits. In order to overcome its drawbacks, and to further advance probe storage technologies, a comprehensive review regarding the current status and future prospect of probe-based memories become of importance. In this paper, we first presented the physical principles of various reported probe-based memories and their respective advantages/disadvantages, as well as their current status. Subsequently, up-to-date progress made on these probe memories and some novel probe memories concepts is proposed. The prospect of a probebased memory device is finally predicted.
引用
收藏
页码:79103 / 79117
页数:15
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