Highly efficient birefringent quarter-wave plate based on all-dielectric metasurface and graphene

被引:7
|
作者
Owiti, Edgar O. [1 ,2 ,4 ]
Yang, Hanning [1 ,2 ]
Liu, Peng [1 ,2 ]
Ominde, Calvine F. [4 ]
Sun, Xiudong [1 ,2 ,3 ]
机构
[1] Harbin Inst Technol, Dept Phys, Inst Modern Opt, Harbin 150001, Heilongjiang, Peoples R China
[2] Minist Ind & Informat Technol, Key Lab Micronano Optoelect Informat Syst, Harbin 150001, Heilongjiang, Peoples R China
[3] Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Shanxi, Peoples R China
[4] Jomo Kenyatta Univ Agr & Technol, Dept Phys, POB 62000-00200, Nairobi, Kenya
基金
中国国家自然科学基金;
关键词
All-dielectric; Magnetic resonance; Quarter-wave plate; DOUBLE FANO RESONANCES; OPTICAL MODULATORS; METAMATERIAL; MANIPULATION; MODE;
D O I
10.1016/j.optcom.2018.03.018
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
All-dielectric metasurfaces offer remarkable properties including high efficiency and flexible control of the optical response. However, extreme, narrow bandwidth is a limitation that lowers applicability of these structures in photonic sensing applications. In this work, we numerically design and propose a switchable quarter-wave plate by hybridizing an all-dielectric metasurface with graphene. By using a single layer of graphene between a highly refractive index silicon and a silica substrate, the transmissive resonance is enhanced and broadened. Additionally, integrating graphene with silicon effectively modulates the Q-factor and the trapped magnetic modes in the silicon. A stable birefringence output is obtained and manipulated through the structure dimensions and the Fermi energy of graphene. A 95% polarization conversion ratio is achieved through converting linearly polarized light into circularly polarized light, and a 96% ellipticity ratio is obtained at the resonance wavelength. The structure is compact and has an ultrathin design thickness of 0.1 lambda, in the telecommunication region. The above properties are essential for integration into photonic sensing devices and the structure has potential for compatibility with the CMOS devices.
引用
收藏
页码:114 / 119
页数:6
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