Compressive creep of high-purity polycrystalline yttrium aluminum garnet (YAG, Y3Al5O12) was investigated at 1300 degrees C and 50-200 MPa in air and in steam. Compressive creep behavior of silicadoped polycrystalline YAG (Y3Al5O12-0.14 wt% SiO2) was also studied. Creep specimens were microstructurally characterized by optical microscopy and TEM before and after creep. Steam slightly increased creep rates of material with grain size less than 1 mu m (the undoped YAG), but otherwise had little effect. The flow stress exponent was n approximate to 1 for both SiO2-doped YAG and undoped YAG. Creep rates and microstructural observations are consistent with the Nabarro-Herring creep mechanism, with creep rate limited by lattice diffusion of yttrium cations (Y3+). Silica-doped YAG had a larger grain size of 2.41 pm and lower creep rates than undoped YAG with 0.92 pm grain size. However, creep rates normalized by grain size for Nabarro-Herring creep were higher in SiO2-doped YAG. Possible effects of SiO2 doping and steam on creep of YAG are discussed. Published by Elsevier B.V.
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Beijing Inst Technol, Sch Mat Sci & Engn, 5 South Zhongguancun St, Beijing 100081, Peoples R China
Natl Key Lab Sci & Technol Mat Shock & Impact, Beijing 100081, Peoples R ChinaBeijing Inst Technol, Sch Mat Sci & Engn, 5 South Zhongguancun St, Beijing 100081, Peoples R China
Jiang, Wen
Cheng, Xingwang
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Beijing Inst Technol, Sch Mat Sci & Engn, 5 South Zhongguancun St, Beijing 100081, Peoples R China
Natl Key Lab Sci & Technol Mat Shock & Impact, Beijing 100081, Peoples R ChinaBeijing Inst Technol, Sch Mat Sci & Engn, 5 South Zhongguancun St, Beijing 100081, Peoples R China
Cheng, Xingwang
Cai, Hongnian
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Beijing Inst Technol, Sch Mat Sci & Engn, 5 South Zhongguancun St, Beijing 100081, Peoples R China
Natl Key Lab Sci & Technol Mat Shock & Impact, Beijing 100081, Peoples R ChinaBeijing Inst Technol, Sch Mat Sci & Engn, 5 South Zhongguancun St, Beijing 100081, Peoples R China
Cai, Hongnian
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Ali, Tayyeb
Zhang, Jian
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Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R ChinaBeijing Inst Technol, Sch Mat Sci & Engn, 5 South Zhongguancun St, Beijing 100081, Peoples R China