Double Pulse Test Based Switching Characterization of SiC MOSFET

被引：0

作者：

Ahmad, S. S. ^{[1
]}

Narayanan, G. ^{[1
]}

机构：

[1] Indian Inst Sci, Dept Elect Engn, Bangalore 560012, Karnataka, India

来源：

2017 NATIONAL POWER ELECTRONICS CONFERENCE (NPEC) | 2017年

关键词：

Asymmetric H-bridge converter; double pulse test; SiC MOSFET; switching characteristics; POWER SEMICONDUCTOR-DEVICES;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Switching characteristics of a 1200 V, 90 A SiC MOSET in an asymmetric II-bridge power converter are measured. Double pulse tests are carried out at different current and voltage levels. The experimental set-up and procedure are explained in detail. The switching waveforms are used to obtain the voltage and current transition times of the MOSFET. The turn-on and turn-off energy losses are also calculated. Since these are influenced by layout of the power circuit, the power converter layout and its effect on the switching waveform are reported. The turn-off energy loss is lower than the data-sheet specified value, while the turn-on energy loss is higher; the total loss is close to the data-sheet value.

引用

页码：319 / 324

页数：6

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