Acceptor states and carrier lifetime in heteroepitaxial HgCdTe-on-Si for mid-infrared photodetectors

被引：3

作者：

Zablotsky, S. V. ^{[1
,2
]}

Bazhenov, N. L. ^{[1
]}

Mynbaev, K. D. ^{[1
,3
]}

Yakushev, M. V. ^{[4
]}

Marin, D. V. ^{[4
]}

Varavin, V. S. ^{[4
]}

Dvoretsky, S. A. ^{[4
]}

机构：

[1] Ioffe Inst, St Petersburg 194021, Russia

[2] St Petersburg Electrotech Univ LETI, St Petersburg 197376, Russia

[3] ITMO Univ, St Petersburg 197101, Russia

[4] Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

2ND INTERNATIONAL SCHOOL AND CONFERENCE SAINT-PETERSBURG OPEN ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SPBOPEN2015) | 2015年 / 643卷

关键词：

TEMPERATURE-DEPENDENCE;

D O I：

10.1088/1742-6596/643/1/012004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Temperature dependences of the carrier lifetime and photoluminescence (PL) spectra in Hg1-xCdxTe (0.3< x <0.4) epilayers grown on Si substrates (HgCdTe-on-Si) and intended for fabrication of p(+)-n photodiodes have been studied. It is shown that the as-grown material has a high concentration of recombination centres with energy 30 divided by 40 meV, which reduces the lifetime. The post-growth annealings, both that converting the material to the p-type and that imitating the activation of an implanted impurity, reduce the concentration of the centres. This manifests itself in an increase in the lifetime, which is especially noticeable after 'activating' annealing and is confirmed by results of the PL studies.

引用

页数：4

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