Bound exciton dynamics in GaN grown by hydride vapor-phase epitaxy

被引：49

作者：

Pozina, G ^{[1
]}

Bergman, JP ^{[1
]}

Paskova, T ^{[1
]}

Monemar, B ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 26期

关键词：

D O I：

10.1063/1.125557

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Temperature-dependent time-resolved photoluminescence measurements were performed on thick GaN layers grown by hydride vapor-phase epitaxy on Al2O3 substrates. Radiative lifetimes were determined for the neutral-donor-bound exciton with position at 3.478 eV and for two neutral-acceptor-bound excitons at 3.473 and 3.461 eV. We report a value of 3600 ps for the radiative lifetime of the acceptor-bound exciton transition at 3.461 eV. The dominant mechanism responsible for the nonradiative recombination of the bound excitons is shown to be connected with dissociation of the bound excitons into free excitons. (C) 1999 American Institute of Physics. [S0003-6951(99)00752-4].

引用

页码：4124 / 4126

页数：3

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