Measurement of beam current and beam diameter of an e-beam lithography system

被引：0

作者：

Saxena, R ^{[1
]}

Prasad, M ^{[1
]}

Sharma, MU ^{[1
]}

Ganesh, S ^{[1
]}

机构：

[1] Solid State Phys Lab, Delhi 110054, India

来源：

PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2 | 2002年 / 4746卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An accurate method to measure beam current (BC) and Beam diameter (BD) of an electron beam lithography System by using a Faraday cup and a sharp edge is described. Tile sharp edge specimen is fabricated on silicon wafer by metal-lift-off. Precise evaluation of the measured beam current and beam diameter at different conditions showed that BC and the square of BD are linear with an offset, which was the sum of optical aberrations, noise, and edge width.

引用

页码：713 / 717

页数：5

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