Excitonic processes in GaAs/AlAs type-II superlattices

被引：11
|
作者：
Nakayama, M [1 ]
机构：
[1] Osaka City Univ, Fac Engn, Dept Appl Phys, Sumiyoshi Ku, Osaka 5588585, Japan
来源：
JOURNAL OF LUMINESCENCE | 2000年 / 87-9卷 / 87期
关键词：
exciton; GaAs/AlAs; superlattice; type-II;
D O I：
10.1016/S0022-2313(99)00207-0
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In CaAs/AlAs type-II superlattices, the lowest-energy exciton consists of the X electron and Gamma heavy hole that are confined in the AlAs and GaAs layers, respectively. The separation of the electron and hole both in real space and in momentum space leads to rich stages of the excitonic processes. Those are reviewed from the following aspects: the fundamental properties connecting with controllability, biexcitons, and condensation phases as bosons (excitonic superfluidity) and fermions (electron-hole droplet). (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：15 / 19
页数：5
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