Carrier-induced fast wavelength switching in tunable V-cavity laser with quantum well intermixed tuning section

被引:12
|
作者
Zhang, Xin [1 ]
He, Jian-Jun [1 ]
Liu, Neng [2 ]
Dubowski, Jan J. [2 ]
机构
[1] Zhejiang Univ, Ctr Integrated Optoelect, State Key Lab Modern Opt Instrumentat, Hangzhou 310027, Zhejiang, Peoples R China
[2] Univ Sherbrooke, Dept Elect & Comp Engn, Interdisciplinary Inst Technol Innovat 3IT, Sherbrooke, PQ J1K 0A5, Canada
来源
OPTICS EXPRESS | 2015年 / 23卷 / 20期
关键词
SEMICONDUCTOR-LASER; MONOLITHIC INTEGRATION; GAAS; FABRICATION; DIFFUSION; DEVICES;
D O I
10.1364/OE.23.026336
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We report on the fast wavelength switching in V-cavity laser (VCL) with quantum well intermixed tuning section. The laser wavelength can be switched between 32 channels at 100 GHz spacing using a single electrode control. The fabrication process involves a quantum well intermixing (QWI) process using KrF laser irradiation and rapid thermal annealing (RTA). The tuning current is less than 40 mA, much lower than previously demonstrated tunable VCL based on electro-thermal-optic effect. The wavelength switching is also faster by three orders of magnitude. The dynamic switching characteristics between two channels with different numbers of intermediate channels are investigated. It shows that the switching time is about 1 ns between adjacent channels and increases up to 12 ns with increasing number of intermediate channels. (C)2015 Optical Society of America
引用
收藏
页码:26336 / 26341
页数:6
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