Influence of Hydrogen on the Germanium Incorporation in a-Si1-xGex:H for Thin-Film Solar Cell Application

被引：2

作者：

Wang, C. M. ^{[1
]}

Huang, Y. T. ^{[1
]}

Yen, K. H. ^{[1
]}

Hsu, H. J. ^{[1
]}

Hsu, C. H. ^{[1
]}

Zan, H. W. ^{[1
]}

Tsai, C. C. ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, 1001 Ta Hsueh Rd, Hsinchu, Taiwan

来源：

AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY - 2010 | 2010年 / 1245卷

关键词：

SIGE-H ALLOYS; AMORPHOUS-SILICON;

D O I：

10.1557/PROC-1245-A04-02

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, we examined the Ge incorporation and the accompanied defect formation during PECVD deposition of hydrogenated amorphous silicon-germanium alloys (a-Si1-xGex:H). In particular, we studied the effect of hydrogen on film growth, defect formation, Ge and Si incorporation efficiencies, and the H-bonding configuration. Our results indicate that hydrogen has a strong effect on improving the a-Si1-xGex:H film quality and the Ge incorporation in a-Si1-xGex:H. With adequate hydrogen dilution, the a-Si1-xGex:H thin-film quality significantly improved. However, excessive hydrogen dilution degraded the film properties. A number of analytical tools were employed, including FTIR, XPS, UV-Visible spectroscopy, photoconductivity, etc. The a-Si1-xGex:H material having 24% Ge content and a bangap of 1.61ev produced the solar cell with a conversion efficiency of 7.07%.

引用

页码：85 / 90

页数：6

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