Influence of Hydrogen on the Germanium Incorporation in a-Si1-xGex:H for Thin-Film Solar Cell Application

被引：2
|
作者：
Wang, C. M. [1 ]
Huang, Y. T. [1 ]
Yen, K. H. [1 ]
Hsu, H. J. [1 ]
Hsu, C. H. [1 ]
Zan, H. W. [1 ]
Tsai, C. C. [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Photon, 1001 Ta Hsueh Rd, Hsinchu, Taiwan
来源：
AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY - 2010 | 2010年 / 1245卷
关键词：
SIGE-H ALLOYS; AMORPHOUS-SILICON;
D O I：
10.1557/PROC-1245-A04-02
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work, we examined the Ge incorporation and the accompanied defect formation during PECVD deposition of hydrogenated amorphous silicon-germanium alloys (a-Si1-xGex:H). In particular, we studied the effect of hydrogen on film growth, defect formation, Ge and Si incorporation efficiencies, and the H-bonding configuration. Our results indicate that hydrogen has a strong effect on improving the a-Si1-xGex:H film quality and the Ge incorporation in a-Si1-xGex:H. With adequate hydrogen dilution, the a-Si1-xGex:H thin-film quality significantly improved. However, excessive hydrogen dilution degraded the film properties. A number of analytical tools were employed, including FTIR, XPS, UV-Visible spectroscopy, photoconductivity, etc. The a-Si1-xGex:H material having 24% Ge content and a bangap of 1.61ev produced the solar cell with a conversion efficiency of 7.07%.
引用
收藏
页码：85 / 90
页数：6
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