Developments in germanium-on-silicon epitaxy by reduced pressure chemical vapor deposition

被引：0

作者：

Van Huy Nguyen ^{[1
]}

Myronov, M. ^{[1
]}

Allred, P. ^{[1
]}

Halpin, J. ^{[1
]}

Dobbie, A. ^{[1
]}

Leadley, D. R. ^{[1
]}

机构：

[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

来源：

2014 15TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (ULIS) | 2014年

基金：

英国工程与自然科学研究理事会;

关键词：

germanium; epitaxy; substrate orientation; HIGH-MOBILITY; LAYERS; SI(001); STRAIN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High quality epitaxial layers of germanium have been deposited directly on a range of silicon substrates using reduced pressure chemical vapor deposition (RP-CVD). Relaxed Ge layers were realized on (001), (110) and (111) orientations with surface roughness below 2 nm in each case, and below 1 nm for (001). Stacking faults were virtually eliminated, while the threading dislocation density was minimized; for (001) this was 1 x 10(7) cm(-2), whereas for (111) it was highest at 2 x 10(8) cm(-2). With such Ge layers many applications are made possible. Examples given include heterostructures with extremely high hole mobility, both at low-and room temperature, and single photon avalanche diodes.

引用

页码：121 / 124

页数：4

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