Developments in germanium-on-silicon epitaxy by reduced pressure chemical vapor deposition

被引：0
|
作者：
Van Huy Nguyen [1 ]
Myronov, M. [1 ]
Allred, P. [1 ]
Halpin, J. [1 ]
Dobbie, A. [1 ]
Leadley, D. R. [1 ]
机构：
[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
来源：
2014 15TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (ULIS) | 2014年
基金：
英国工程与自然科学研究理事会;
关键词：
germanium; epitaxy; substrate orientation; HIGH-MOBILITY; LAYERS; SI(001); STRAIN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High quality epitaxial layers of germanium have been deposited directly on a range of silicon substrates using reduced pressure chemical vapor deposition (RP-CVD). Relaxed Ge layers were realized on (001), (110) and (111) orientations with surface roughness below 2 nm in each case, and below 1 nm for (001). Stacking faults were virtually eliminated, while the threading dislocation density was minimized; for (001) this was 1 x 10(7) cm(-2), whereas for (111) it was highest at 2 x 10(8) cm(-2). With such Ge layers many applications are made possible. Examples given include heterostructures with extremely high hole mobility, both at low-and room temperature, and single photon avalanche diodes.
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页码：121 / 124
页数：4
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