Monte Carlo simulator for x-ray spectra analysis of GaAs detectors

被引：0

作者：

Cola, A ^{[1
]}

Reggiani, L ^{[1
]}

Vasanelli, L ^{[1
]}

机构：

[1] CNR, Ist Studio Nuovi Mat Elettron, I-73100 Lecce, Italy

来源：

HARD X-RAY, GAMMA-RAY, AND NEUTRON DETECTOR PHYSICS | 1999年 / 3768卷

关键词：

GaAs; detectors; Monte Carlo; trapping; semiconductors; simulators; charge collection; x-ray;

D O I：

10.1117/12.366604

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have developed a Monte Carlo simulator for semi-insulating GaAs detectors which gives the energy spectra of x-ray radiations. The simulated spectra are analyzed in terms of: shaping time, trapping properties of the material, and applied reverse voltage. The main features of the spectra as well as the associated charge collection efficiency and the energy resolution of the photoelectric peak are interpreted in physical terms for the whole range of applied voltages covering under- and over-depleted conditions. The results of the simulations provide a general interpretation scheme which is satisfactorily tested with experimental results.

引用

页码：392 / 399

页数：8

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