Multiferroic Bismuth Ferrite Based Thin Films

被引：0
|
作者：
Yesner, G. [1 ]
Safari, A. [1 ]
机构：
[1] Rutgers State Univ, Dept Mat Sci & Engn, Piscataway, NJ 08854 USA
来源：
2013 IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRIC AND WORKSHOP ON THE PIEZORESPONSE FORCE MICROSCOPY (ISAF/PFM) | 2013年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Bismuth ferrite thin films have been prepared via a modified polymerizable complex sol-gel method and deposited on SiO2/Si[100] substrates. The rhombohedral BFO phase was obtained by annealing the thin films on a hot plate at 475 degrees C for 30 minutes. Samples annealed at 550 degrees C for 2 hours developed the secondary phase Bi2Fe4O9 due to loss of bismuth.
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页码：122 / 123
页数：2
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