Monolayer GaN functionalized with alkali metal and alkaline earth metal atoms: A first-principles study

被引:12
|
作者
Yeoh, Keat Hoe [1 ]
Yoon, Tiem Leong [2 ]
Lim, Thong Leng [3 ]
Rusi [4 ]
Ong, Duu Sheng [5 ]
机构
[1] Univ Tunku Abdul Rahman, Dept Elect & Elect Engn, Lee Kong Chian Fac Engn & Sci, Kajang 43000, Selangor, Malaysia
[2] Univ Sains Malaysia, Sch Phys, George Town 11800, Malaysia
[3] Multimedia Univ, Fac Engn & Technol, Jalan Ayer Keroh Lama, Melaka 75450, Malaysia
[4] Int Univ Malaya Wales, Ctr Fdn Studies, Kuala Lumpur 50480, Malaysia
[5] Multimedia Univ, Fac Engn, Persiaran Multimedia, Cyberjaya 63100, Selangor, Malaysia
关键词
Alkali metal atom; Alkaline earth metal atom; Density functional theory; Monolayer GaN; Work function; QUANTUM DOTS; NITRIDE; GROWTH; NANOWIRES; GRAPHENE; ADSORPTION; EMISSION; NANORODS; DENSITY; ADATOMS;
D O I
10.1016/j.spmi.2019.05.011
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Based on first-principles calculations, we have carried out a systematic study on the geometric, electronic and magnetic properties of free-standing monolayer GaN (ML GaN) functionalized with Lithium (Li), Sodium (Na), Beryllium (Be) or Calcium (Ca) atoms. We consider three different levels of concentrations i.e. theta = 1/8,1/18 and 1/32. Within the tested theta, metallization of ML GaN only occurs with the adsorption of Li or Na atoms. The adsorption of Be or Ca atoms preserves the semiconducting characteristics of ML GaN. The ML GaN remains non-magnetic with the adsorption of Be or Ca atom. In contrast, the total magnetization of the Li-adsorbed ML GaN decreases as Li atoms concentration increases. For the case of Na adsorption, the ML GaN exhibits ferromagnetism only at theta = 1/18. In addition, we found the work function of the functionalized ML GaN can be controlled by varying the concentrations of the adatoms. Our findings here suggest that by selective adsorption of Group I and Group II element, ML GaN is a promising material for the development of spintronic and field emission devices.
引用
收藏
页码:428 / 436
页数:9
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