A 5∼14GHz Wideband LNA using 0.13μm SiGe BiCMOS Technology

被引：0

作者：

He, Weipeng ^{[1
]}

Li, Zhiqun ^{[1
]}

Yao, Yan ^{[1
]}

Xue, Yongbin ^{[1
]}

Luo, Lei ^{[1
]}

Cheng, Guoxiao ^{[1
]}

机构：

[1] Southeast Univ, Inst RF & OE ICs, Nanjing 210096, Jiangsu, Peoples R China

来源：

PROCEEDINGS OF 2018 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS, TECHNOLOGIES AND APPLICATIONS (ICTA 2018) | 2018年

关键词：

Wideband; LNA; SiGe; BiCMOS; noise figure;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A Wideband low-noise amplifier (LNA) designed and implemented in 0.13 mu m SiGe BiCMOS technology is presented in this paper. The inductive peaking technology is adopted to expand the bandwidth, the resistance negative feedback technology and the emitter degeneration inductive technology are adopted to improve the flatness of gain and input matching. This LNA achieves a flat gain of 10.7 similar to 42.9 dB in the frequency range of 5 similar to 14 GHz. The noise figure (NF) of the LNA is 3.5 similar to 6.1 dB across the band. The input return losses (S11) of the LNA are better than -10 dB. The LNA dissipates 9.4mA with a 3.3 V supply.

引用

页码：59 / 60

页数：2

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