The reactive ion etching of gallium nitride by methylchloride/hydrogen

被引：0
|
作者：
Dineen, M [1 ]
Thomas, H
Humphreys, B
McMeekin, SG
机构：
[1] Univ Wales Coll Cardiff, Cardiff Sch Engn, Cardiff CF1 3NS, S Glam, Wales
[2] Oxford Instruments Plasma Technol, Bristol BS49 4AP, Avon, England
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1999年 / 176卷 / 01期
关键词：
D O I：
10.1002/(SICI)1521-396X(199911)176:1<739::AID-PSSA739>3.0.CO;2-V
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the reactive ion etching of gallium nitride (GaN) using methylchloride/hydrogen, CH3Cl/H-2,. The effect of the rf power input, total gas flow rate, pressure and gas chemistry on etch rate were investigated and the optimum process identified using the orthogonal design method. Etch rates of 100 nm/min have been obtained. A study of the effect of etching on the contact resistance vias carried out which showed an increase in resistance for etched samples.
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页码：739 / 742
页数：4
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